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IRFR3709Z 参数 Datasheet PDF下载

IRFR3709Z图片预览
型号: IRFR3709Z
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用:
文件页数/大小: 11 页 / 216 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD - 94712
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
IRFR3709Z
IRFU3709Z
Qg
17nC
6.5m
:
V
DSS
R
DS(on)
max
30V
D-Pak
IRFR3709Z
I-Pak
IRFU3709Z
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
Units
V
A
™
f
61
f
86
340
79
39
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
W
0.53
-55 to + 175
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.9
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
06/23/03