IRG4PC50UDPbF
8000
20
V
G E
, Gate-to-Emitter Voltage (V)
V
GE
C
ie s
C
re s
C
oes
=
=
=
=
0V ,
f = 1M Hz
C
ge
+ C
gc
, C
ce
SH O R TED
C
gc
C
ce
+ C
gc
V
C E
= 400V
I
C
= 27A
16
C, Capacitance (pF)
6000
C
ie s
12
4000
C
oes
2000
8
C
res
4
0
1
10
A
100
0
0
40
80
120
160
A
200
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.0
T ota l S w itching Loss es (m J)
2.5
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 2 5 °C
= 27A
10
I
C
= 54A
I
C
= 27A
1
2.0
I
C
= 14A
1.5
1.0
0
10
20
30
40
50
A
60
0.1
R
G
= 5.0
Ω
V
G E
= 15V
V
C C
= 480V
-60
-40
-20
0
20
40
60
80
100
120
140
A
160
R
G
, G a te R e s is ta n c e (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
IRF [ INTERNATIONAL RECTIFIER ]
