IRG4PH40UD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 1200 —
Temperature Coeff. of Breakdown Voltage — 0.43
Collector-to-Emitter Saturation Voltage
— 2.43
— 2.97
— 2.47
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance
T
16
24
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
2.6
—
2.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
— V/°C V
GE
= 0V, I
C
= 1.0mA
3.1
I
C
= 21A
V
GE
= 15V
—
V
I
C
= 41A
See Fig. 2, 5
—
I
C
= 21A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
= 21A
250
µA
V
GE
= 0V, V
CE
= 600V
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
3.3
V
I
C
= 8.0A
See Fig. 13
3.1
I
C
= 8.0A, T
J
= 125°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
86
13
29
46
35
97
240
1.80
1.93
3.73
42
32
240
510
7.04
13
1800
120
18
63
106
4.5
6.2
140
335
133
85
Max. Units
Conditions
130
I
C
= 21A
20
nC V
CC
= 400V
See Fig. 8
44
V
GE
= 15V
—
T
J
= 25°C
—
ns
I
C
= 21A, V
CC
= 800V
150
V
GE
= 15V, R
G
= 10Ω
360
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ See Fig. 9, 10, 18
4.6
—
T
J
= 150°C, See Fig. 11, 18
—
ns
I
C
= 21A, V
CC
= 800V
—
V
GE
= 15V, R
G
= 10Ω
—
Energy losses include "tail" and
—
mJ diode reverse recovery.
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
95
ns
T
J
= 25°C See Fig.
14
I
F
= 8.0A
160
T
J
= 125°C
8.0
A
T
J
= 25°C See Fig.
11
T
J
= 125°C
15
V
R
= 200V
380
nC T
J
= 25°C See Fig.
880
T
J
= 125°C
16
di/dt = 200A/µs
—
A/µs T
J
= 25°C See Fig.
—
T
J
= 125°C
17
2
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