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IRGP4063DPBF 参数 Datasheet PDF下载

IRGP4063DPBF图片预览
型号: IRGP4063DPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 绝缘栅双极型晶体管,超快软恢复二极管 [INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE]
分类和应用: 晶体二极管双极型晶体管功率控制双极性晶体管局域网超快软恢复二极管快速软恢复二极管
文件页数/大小: 10 页 / 779 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD - 97210
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
IRGP4063DPbF
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
G
E
t
SC
5µs, T
J(max)
= 175°C
n-channel
V
CE(on)
typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
Gate
C
E
C
G
TO-247AC
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
96
48
192
192
96
48
192
±20
±30
330
170
-55 to +175
Units
V
c
e
A
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
0.92
–––
–––
Units
°C/W
1
www.irf.com
05/11/06