SMPS IGBT
PD - 95330
IRGP50B60PD1PbF
C
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
•
•
•
•
•
•
•
•
•
•
•
•
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
NPT Technology, Positive Temperature Coefficient
Lower V
CE
(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
V
CES
= 600V
V
CE(on)
typ. = 2.00V
@ V
GE
= 15V I
C
= 33A
G
E
Features
n-channel
Equivalent MOSFET
Parameters
R
CE(on)
typ. = 61mΩ
I
D
(FET equivalent) = 50A
Benefits
G
C
E
•
Parallel Operation for Higher Current Applications
•
Lower Conduction Losses and Switching Losses
•
Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FRM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
Units
V
d
A
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
e
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
°C/W
g (oz)
6/2/04
IRF [ INTERNATIONAL RECTIFIER ]
