PD - 97011B
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
100% R
G
Tested
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
HEXFET
®
Power MOSFET
R
DS(on)
max (mW)
3.0@V
GS
= 10V
V
DSS
30V
I
D
260A
TO-220AB
IRL3713PbF
D
2
Pak
IRL3713SPbF
TO-262
IRL3713LPbF
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@Tc = 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max
30
Units
V
V
A
c
h
180
h
1040
h
330
170
2.2
-55 to +175
± 20
260
W
W/°C
°C
Thermal Resistance
Symbol
R
θJC
R
qCS
R
θJA
R
θJA
Parameter
Junction-to-Case
i
Typ
Max
0.45*
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
fi
f
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
gi
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
through
are on page 11
www.irf.com
1
07/22/05
IRF [ INTERNATIONAL RECTIFIER ]
