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IRLL3303 参数 Datasheet PDF下载

IRLL3303图片预览
型号: IRLL3303
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管光电二极管
文件页数/大小: 9 页 / 163 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD- 91379C
IRLL3303
HEXFET
®
Power MOSFET
Surface Mount
l
Dynamic dv/dt Rating
l
Logic-Level Gate Drive
l
Fast Switching
l
Ease of Paralleling
l
Advanced Process Technology
l
Ultra Low On-Resistance
Description
l
D
V
DSS
= 30V
G
S
R
DS(on)
= 0.031Ω
I
D
= 4.6A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -22 3
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current

Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Junction and Storage Temperature Range
Max.
6.5
4.6
3.7
37
2.1
1.0
8.3
± 16
140
4.6
0.10
1.3
-55 to + 150
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93
48
Max.
120
60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
1/22/99