IRLR/U7821
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C SHORTED
gs
gd ds
Crss = C
gd
Coss = Cds + Cgd
6
VGS , Gate-to-Source Voltage (V)
ID= 12A
5
4
3
2
1
0
VDS= 24V
VDS= 16V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
2
4
6
8
10
12
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10msec
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
10
1
T
J
= 25
°
C
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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