IRLZ24N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
55
1.0
8.3
Typ.
0.061
7.1
74
20
29
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.060
V
GS
= 10V, I
D
= 11A
0.075
Ω
V
GS
= 5.0V, I
D
= 11A
0.105
V
GS
= 4.0V, I
D
= 9.0A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
15
I
D
= 11A
3.7
nC V
DS
= 44V
8.5
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 11A
ns
R
G
= 12Ω, V
GS
= 5.0V
R
D
= 2.4Ω, See Fig. 10
Between lead,
4.5
6mm (0.25in.)
nH
from package
7.5
and center of die contact
480
V
GS
= 0V
130
pF
V
DS
= 25V
61
= 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
18
showing the
A
G
integral reverse
72
p-n junction diode.
1.3
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
60
90
ns
T
J
= 25°C, I
F
= 11A
130 200
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
I
SD
≤
11A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
,
Pulse width
≤
300µs; duty cycle
≤
2%.
T
J
≤
175°C
IRF [ INTERNATIONAL RECTIFIER ]
