PRELIMINARY
Data Sheet No. PD60249 revB
IRS2110(-1,-2,S)PbF
IRS2113(-1,-2,S)PbF
Features
HIGH AND LOW SIDE DRIVER
•
Floating channel designed for bootstrap operation
Product Summary
•
Fully operational to +500 V or +600 V
VOFFSET (IRS2110)
500 V max.
•
Tolerant to negative transient voltage, dV/dt immune
(IRS2113)
600 V max.
•
Gate drive supply range from 10 V to 20 V
I
O+/-
2 A/2 A
•
Undervoltage lockout for both channels
•
3.3 V logic compatible
VOUT
10 V - 20 V
•
Separate logic supply range from 3.3 V to 20 V
ton/off (typ.)
130 ns & 120 ns
•
Logic and power ground ±5V offset
•
CMOS Schmitt-triggered inputs with pull-down
Delay Matching (IRS2110) 10 ns max.
•
Cycle by cycle edge-triggered shutdown logic
(IRS2113) 20 ns max.
•
Matched propagation delay for both channels
Packages
•
Outputs in phase with inputs
Description
The IRS2110/IRS2113 are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. Logic in-
puts are compatible with standard CMOS or LSTTL
output, down to 3.3 V logic. The output drivers feature
a high pulse current buffer stage designed for mini-
mum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-chan-
nel power MOSFET or IGBT in the high side configura-
tion which operates up to 500 V or 600 V.
14-Lead PDIP
IRS2110 and IRS2113
16-Lead PDIP
(w/o leads 4 & 5)
IRS2110-2 and IRS2113-2
14-Lead PDIP
(w/o lead 4)
IRS2110-1 and IRS2113-1
16-Lead SOIC
IRS2110S and
IRS2113S
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to 500 V or 600 V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connec-
tions only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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