MBRD650CTPbF, MBRD660CTPbF
Bulletin PD-21097 rev. B 08/06
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBRD650CTPbF
50
MBRD660CTPbF
60
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward(Per Leg)
Current * See Fig. 5
I
FSM
E
AS
I
AR
(Per Device)
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repet. Aval. Energy (Per Leg)
Repetitive Avalanche Current
(Per Leg)
Value
3.0
6
490
75
6
0.6
Units
A
Conditions
50% duty cycle @ T
C
= 128°C, rectangular wave form
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
A
mJ
A
T
J
= 25 °C, I
AS
= 1 Amp, L = 12 mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
(1)
Value
0.7
0.9
0.65
0.85
0.1
15
145
5.0
10000
Units
V
V
V
V
mA
mA
pF
nH
V/μs
@
@
@
@
3A
6A
3A
6A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
(Per Leg) * See Fig. 2
(1)
Typ. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
(1) Pulse Width < 300μs, Duty Cycle <2%
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
Junction to Case
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
Value
-40 to 150
6
3
80
Units
°C
°C
Conditions
Max. Junction Temperature Range (*) -40 to 150
R
thJC
Max. Thermal Resistance (Per Leg)
(Per Device)
R
thJA
Max. Thermal Resistance Junction
°C/W DC operation
°C/W
* See Fig. 4
0.3 (0.01) g (oz.)
D-Pak
MBRD660CT
Similar to TO-252AA
thermal runaway condition for a diode on its own heatsink
2
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