PD- 93768A
Si4435DY
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
S
1
8
7
A
D
D
D
D
S
S
G
2
V
DSS
= -30V
3
6
4
5
R
DS(on)
= 0.020Ω
Description
These P-channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
www.irf.com
1
10/14/99
IRF [ INTERNATIONAL RECTIFIER ]
