〈
SMALL-SIGNAL TRANSISTOR
〉
2SA1603
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
DESCRIPTION
2SA1603 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
0.425
2.1
1.25 0.425
OUTLINE DRAWING
Unit
：�½��½�
0.65
①
②
③
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
0.9
0.7
0.15
0.65
FEATURE
2.0
1.30
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA
：SC-70
TERMINAL CONNECTER
①
：BASE
Ratings
-50
-50
-6
-100
150
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
MAXIMUM RATINGS
（Ta=25℃
）
Symbol
V
CBO
V
CEO
V
EBO
I
O
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②
：EMITTER
③
：COLLECTOR
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
I
C
=-100μA ,R
V
V
V
V
CB
=-50V,
EB
=-4V,
CE
=-6V,
CE
=-6V,
0∼0.1
Test conditions
BE
=∞
0.3
Limits
Min
-50
-
-
120
70
-
-
-
Typ
-
-
-
-
-
-
200
2.5
Max
-
-0.5
-0.5
820
-
-0.3
-
-
V
MHz
pF
Unit
V
μA
μA
I
E
=0mA
I
C
=0mA
I
C
=-1mA ※
I
C
=-0.1mA
I
C
=-30mA ,I
B
=-1.5mA
V
V
CE
=-6V,
CB
=-6V,
I
E
=10mA
I
E
=0,f=1MHz
※ It shows hFE classification in below table.
）
Item
�½�ＦＥ Item
Ｑ
120 270
Ｒ
180 390
Ｓ
270 560
Ｔ
390 820
ISAHAYA
ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
