〈
SMALL-SIGNAL TRANSISTOR〉
2SA2027
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
DESCRIPTION
2SA2027 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for high voltage application.
.
�½�FE rank
4.4±0.1
1.6±0.1
Lot No.
OUTLINE DRAWING
Unit：
�½��½�
φ1
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.5V max
2.5±0.1
0.8MIN
1.5±0.1
1.5±0.1
Abbreviation
0.4±0 0 7
.
0.5±0 0 7
.
0 1 MAX
.
0.4±0 0 7
.
APPLICATION
For Hybrid IC, DC-DC converter
For kind
JEITA
：SC-62
TERMINAL CONNECTER
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
P
c
T
j
T
stg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-300
-300
-7
-100
500
＋150
-55∼＋150
Unit
V
V
V
mA
mW
℃
℃
①
：EMITTER
②
：COLLECTOR
③
：BASE
ELECTRICAL CHARACTERISTICS
（Ta=25℃
）
Parameter
C to B break down voltage
E to Bbreak down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
VCE(sat)
fT
Cob
Test conditions
I
C
=-50μA ,I
E
=0
I
E
=-50μA ,I
C
=0
I
C
=-1mA ,R
BE
=∞
Limits
Min
-300
-7
-300
-
-
50
-
-
-
Typ
-
-
-
-
-
-
-
40
3.0
Max
-
-
-
-0.5
-0.5
305
-0.5
-
-
Unit
V
V
V
μA
μA
V
CB
=--300V, I
E
=0mA
V
EB
=-5V, I
C
=0mA
V
CE
=-10V, I
C
=-10mA
I
C
=-100mA ,I
B
=-10mA
V
CE
=-6V, I
E
=10mA
V
=-6V, I =0,f=1MHz
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
