〈
SMALL-SIGNAL TRANSISTOR
〉
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
2SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
0.4
Complementary with 2SA1235A.
①
②
③
0.25
0.2
0.8
0.2
2SA2068
FOR LOW
FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
Unit
:�½��½�
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
0.45
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
O
0.4
FEATURE
1.2
0.8
JEITA
:
Ratings
-50
-6
-50
-200
100
+125
-55∼+125
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
TERMINAL CONNECTER
①
:BASE
②
:EMITTER
③
:COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
(Ta=25℃
)
Limits
Min
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=-100μA, R
V
V
V
V
CB
EB
BE
Typ
―
-
-
※
-
-
200
4.0
-
Max
―
-0.1
-0.1
800
-
- 0.3
-
-
20
V
μA
μA
-
-
v
MHz
pF
dB
=∞
-50
-
-
150
90
-
-
-
-
=-50V, I
E
=0mA
=-6V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-0.1mA
=-6V, I
E
=10mA
=-6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=-100mA, I
B
=-10mA
V
V
V
CE
CB
CE
=-6V, I
E
=0.3mA,f=100Hz,RG=10kΩ
※ It shows hFE classification in below table.
Item
hFE
Abbrivation
E
150∼300
ME
F
250∼500
MF
G
400∼800
MG
ISAHAYA
ELECTRONICS CORPORATION