欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA2068F 参数 Datasheet PDF下载

2SA2068F图片预览
型号: 2SA2068F
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号晶体管 [SMALL-SIGNAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 48 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号2SA2068F的Datasheet PDF文件第2页  
SMALL-SIGNAL TRANSISTOR
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.  
DESCRIPTION
 2SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
 mounting are possible.
0.4
Complementary with 2SA1235A.
0.25
0.2
0.8
0.2
2SA2068
FOR LOW 
FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
Unit
:�½��½�
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
0.45
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
O
0.4
FEATURE
1.2
0.8
JEITA
Ratings
-50
-6
-50
-200
100
+125
-55∼+125
Unit
V
V
V
mA
mW
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
TERMINAL CONNECTER
:BASE
:EMITTER
:COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
(Ta=25℃
Limits
Min
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=-100μA, R
V
V
V
V
CB
EB
BE
Typ
-
-
-
-
200
4.0
-
Max
-0.1
-0.1
800
-
- 0.3
-
-
20
V
μA
μA
-
-
v
MHz
pF
dB
=∞
-50
-
-
150
90
-
-
-
-
=-50V, I
E
=0mA
=-6V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-0.1mA
=-6V, I
E
=10mA
=-6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=-100mA, I
B
=-10mA
V
V
V
CE
CB
CE
=-6V, I
E
=0.3mA,f=100Hz,RG=10kΩ
   
  
                                       
※ It shows hFE classification in below table.
Item
hFE
Abbrivation
E
150∼300
ME
F
250∼500
MF
G
400∼800
MG
ISAHAYA
 ELECTRONICS CORPORATION