2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low V
CE（sat）.
OUTLINE DRAWING
2.5
0.5
1.5
0.5
Unit：mm
①
2.90
1.90
FEATURE
●High collector current
I
C（MAX）
=-500mA
●Low collector to emitter saturation voltage
V
CE（sat）
<-0.4V
max
(IC=-150mA、IB=-15mA）
0.95
0.95
③
②
0�½�0.1
1.1
APPLICATION
For switching application, small type motor drive application.
Notice:
The dimension without
tolerance represent central
value.
TERMINAL CONNECTOR
①：BASE
EIAJ：SC-59
②：EMITTER
JEDEC：TO-236
③：COLLECTOR
Resemblance
MAXIMUM RATINGS（Ta=25℃）
記 号
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
項
目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定 格 値
-60
-60
-5
-500
200
150
-55�½�150
単 �½�
V
V
V
mA
mW
℃
℃
MARKING
Type Name
0.8
A ・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
V
CE（sat）
V
BE（sat）
f
T
C
ob
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
IC=-1mA、IB=0
IC=-10uA、IE=0
IE=-10uA、IC=0
VCB=-50V、IE=0
VEB=-3V、IC=0
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
Min
-60
-60
-5
Limits
Typ
Max
Unit
V
V
V
nA
nA
---
V
V
MHz
pF
100
-100
-100
300
-0.4
-1.3
8
200
ISAHAYA ELECTRONICS CORPORATION
0.16
0.4
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
