2SA2167
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA2167 is a silicon PNP epitaxial type transistor.
It is designed with high voltage, high Collector current,
high Collector dissipation.
OUTLINE DRAWING
4.6MAX
1.6
1.5
Unit：mm
●High voltage V
CEO
=-60V
●High Collector current I
C
=-2A
●Low Collector to Emitter saturation voltage
V
CE（sat）
＝0.5VMax （@I
C
=-1A/IB=-50mA）
●High Collector dissipation PC=500mW
0.8MIN
FEATURE
E
C
B
1.5
3.0
0.53
MAX
0.48MAX
0.4
4.2MAX
2.5
MARKING
マーキング
APPLICATION
Audiovisual apparatus, VTR, Relay drive
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-6
-60
-2
-3
500
150
-55∼150
Unit
V
V
V
A
A
mW
℃
℃
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-62
JEDEC：SOT-89
MARKING
TYPE NAME
A L
D
Lot No.
hFE ITEM
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
V
（BR）CBO
V
（BR）EBO
V
（BR）CEO
I
CBO
I
EBO
h
FE
V
CE（sat）
f
T
C
ob
Parameter
Collector to Base brake down voltage
Emitter to Base brake down voltage
Collector to Emitter brake down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Test condition
IC=-10uA、IE=0mA
IE=-10uA、IC=0mA
IC=-2mA、RBE=∞
VCB=-50V、IE=0mA
VEB=-4V、IC=0mA
VCE=-4V、IC=-100mA
IC=-1A、IB=-50mA
VCE=-2V、IE=10mA
VCB=10V、IE=0mA、f=1MHz
C
55∼110
Min
-60
-6
-60
Limits
Typ
Max
Unit
V
V
V
μA
μA
−
V
MHz
pF
55
-0.2
65
23
D
90∼180
-0.2
-0.2
300
-0.5
MARKING
h
FE
E
150∼300
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
