〈SMALL-SIGNAL TRANSISTOR〉
2SC3052
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
DESCRIPTION
2SC3052 is a mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
OUTLINE DRAWING
Unit：½½
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-59
JEDEC：Similar to TO-236
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
50
6
200
200
＋150
-55∼＋150
Unit
V
V
V
mA
mW
℃
℃
Type name
hFE Item
MARKING
L F
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
※） It shows hFE classification at right table.
Item
hFE Item
E
150∼300
F
250∼500
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=100μA ,R
V
V
V
V
CB
EB
BE
Test conditions
=∞
Limits
Min
50
-
-
※
150
90
-
-
-
-
Typ
-
-
-
-
-
-
200
2.5
-
Max
-
0.1
0.1
500
-
0.3
-
-
15
Unit
V
μA
μA
=50V, I
E
=0mA
=6V, I
C
=0mA
=6V, I
C
=1mA
=6V, I
C
=0.1mA
=6V, I
E
=-10mA
=6V, I
E
=0,f=1MHz
CE
CE
I
C
=100mA ,I
B
=10mA
V
V
V
CE
V
MHz
pF
dB
CB
CE
=6V, I
E
=-0.1mA,f=1kHz,RG=2kΩ
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
