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2SC3928A_11 参数 Datasheet PDF下载

2SC3928A_11图片预览
型号: 2SC3928A_11
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY应用硅NPN外延型 [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE]
分类和应用:
文件页数/大小: 2 页 / 138 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号2SC3928A_11的Datasheet PDF文件第2页  
〈SMALL-SIGNAL TRANSISTOR〉
2SC3928A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC3928A is super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
Complementary with ISA1530AC1.
2.8
1.90
0.95 0.95
0.4
0.65
OUTLINE DRAWING
2.8
1.5
0.65
Unit:½½
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
1.1
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
TERMINAL CONNECTER
①:BASE
②:EMITTER
JEITA:SC-59
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
③:COLLECTOR
Ratings
50
50
6
200
200
+150
-55½+150
Unit
V
V
V
mA
mW
Type name
hFE Item
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
MARKING
P
C
T
j
T
stg
H
R
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise Figure
※: It shows hFE classification at right table.
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
Test conditions
IC=100μA,RBE=∞
VCB=50V,IE=0
VEB=4V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA,IB=10mA
VCE=6V,IE=-10mA
VCB=6V,IE=0,f=1MHz
VCE=6V,IE=-0.1mA,f=1kHz,RG=2kΩ
Item
hFE
Q
120½270
Limits
Min
50
120
70
Typ
(※)
200
4
R
180½390
Max
0.1
0.1
560
0.3
15
S
270½560
Unit
V
μA
μA
V
MHz
pF
dB
ISAHAYA ELECTRONICS CORPORATION
0½0.1
0.13
●Super mini package for easy mounting
0.8