〈SMALL-SIGNAL TRANSISTOR〉
2SC4155A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC4155A is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
0.66
①
0.34
0.425
2.1
1.25
0.425
OUTLINE DRAWING
Unit：½½
2.1
1.32
0.66
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
0.9
②
③
●Super mini package for easy mounting
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-70
JEDEC： -
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
50
6
200
200
＋150
-55½＋150
Unit
V
V
V
mA
mW
℃
℃
MARKING
P
c
T
j
T
stg
H
・
R
Type name
hFE Item
Limits
Min
50
－
－
120
70
－
－
－
－
Ｑ
120½270
Typ
－
－
－
(※)
－
－
200
4
－
Ｒ
180½390
Max
－
0.1
0.1
560
－
0.3
－
－
15
Ｓ
270½560
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise Figure
＊： It shows hFE classification at right table
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
Test conditions
IC=100μA,RBE=∞
VCB=50V,IE=0
VEB=4V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA,IB=10mA
VCE=6V,IE=-10mA
VCB=6V,IE=0,f=1MHz
VCE=6V,IE=-0.1mA,f=1kHz,RG=2kΩ
Item
hFE
Unit
V
μA
μA
－
－
V
MHz
pF
dB
ISAHAYA ELECTRONICS CORPORATION
0½0.1
0.12
0.7
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
