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2SC5398_12 参数 Datasheet PDF下载

2SC5398_12图片预览
型号: 2SC5398_12
PDF下载: 下载PDF文件 查看货源
内容描述: 低频扩增应用NPN硅外延型微 [For Low Frequency Amplify Application Silicon NPN Epitaxial Type Micro]
分类和应用:
文件页数/大小: 3 页 / 184 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号2SC5398_12的Datasheet PDF文件第2页浏览型号2SC5398_12的Datasheet PDF文件第3页  
〈transistor〉
2SC5398
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5398 is a silicon NPN epitaxial type transistor.
It is designed for low frequency voltage amplify
application.
OUTLINE DRAWING
UNIT:mm
TERMINAL CONNECTOR
①:EMITTER
EIAJ: -
②:COLLECTOR
JEDEC: -
③:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
6
50
100
450
+150
-55½+150
Unit
V
V
V
mA
mW
MARKING
398
□□Q
Type name
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
V(
BR
)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain ※
DC forward current gain
C to E Saturation voltage
Gain bandwidth product
Collector output capacitance
Test conditions
I
C
= 100μA , R
BE
= ∞
V
V
V
V
CB
EB
Min
50
-
-
120
70
-
-
-
Item
hFE
Q
120½270
Typ
-
-
(※)
-
200
2.0
R
Max
-
0.5
0.5
560
-
0.3
-
-
Unit
V
μA
μA
-
-
V
MHz
pF
S
270½560
= 50V , I
E
= 0mA
= 6V , I
C
= 1mA
= 6V , I
C
= 0.1mA
= 4V , I
C
= 0mA
CE
CE
I
C
=30mA , I
B
= 1.5mA
V
V
CE
= 6V , I
E
= -10mA
= 6V , I
E
= 0mA,f=1MHz
CB
※:It
shows hFE classification at right table.
180½390
ISAHAYA ELECTRONICS CORPORATION