〈Transistor〉
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (Super Mini type)
2SC5626
DESCURIPTION
Mitsubishi 2SC5626 is a super mini packege resin sealed
silicon NPN epitaxial ty pe transistor. It is designed f or high
f requency amplif y application.
OUTLINE DRAWING
2.1
0.425 1.25 0.425
Unit:mm
FEATURE
・Super
mini package f or easy mounting
・High
gain band width product
2.0
1.30
0.65
0.65
1
0.3
2
3
APPLICATION
Small ty pe machine high f requency amplif y
application
0.9 0.7
0�½�0.1
TERMINAL CONNECTOR
1 : BASE
2 : EMITTER
3 : COLLECTOR
JEITA : SC-70
JEDEC :
-
0.15
MAXIMUM RATINGS (Ta=25℃)
SY MBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base v oltage
Emitter to Base v oltage
Collector to Emitter voltage
RATINGS
30
4
20
50
150
+150
-55to+150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Collector current
Collector dissipation(Ta=25℃)
S
TYPE NAME
W
P
C
T
j
T
stg
Junction temperature
Storage temprature
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SY MBOL
PARAMETER
TEST CONDITIONS
I
C
=50μ A, I
E
=0mA
I
C
=100μ A, R
BE
=∞
I
C
=50μ A, I
C
=0mA
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=10V, I
C
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
E
=-10mA
V
CB
=6V, I
E
=0, f =1MHz
600
50
148
0.1
1100
1.2
1.5
0.3
V
MHz
pF
LIMITS
MIN
30
20
4
0.5
0.5
TY P
MAX
UNIT
V
V
V
μ
A
μ
A
V
(BR)CBO
C to B break down v oltage
V
(BR)CEO
C to E break down v oltage
V
(BR)EBO
E to B break down v oltage
I
CBO
I
EBO
Collector cut cf f current
Emitter cut of f current
DC f orward current gain
C to E Saturation v oltage
Gain band width product
Collector output capacitance
h
FE
V
CE(sat)
f
T
C
ob
ISAHAYA ELECTRONICS
CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
