〈
SMALL-SIGNAL TRANSISTOR
〉
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
2SC5789 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
0.4
①
②
③
0.2
0.8
0.2
2SC5789
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit
：�½��½�
● Super-thin flat lead type package.
t=0.45mm
● High gain bandwidth product.
0.45
fT=12.0GHz
●High gain, low noise.
●Can operate at low voltage.
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
0.4
FEATURE
1.2
0.8
JEITA
：
TERMINAL CONNECTER
①
：BASE
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
15
6
1.5
50
Unit
V
V
V
mA
mW
②
：EMITTER
③
：COLLECTOR
P
c
T
j
T
stg
＋125
-55∼＋125
℃
℃
ELECTRICAL CHARACTERISTICS
（Ta=25℃
）
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Symbol
I
CBO
I
EBO
hFE
fT
Cob
|S
21
|
2
NF
V
V
V
V
V
V
V
CB
EB
Test conditions
=10V, I
E
=0mA
0.25
Limits
Min
-
-
30
-
-
10.0
-
Typ
-
-
-
12.0
0.7
13.0
1.2
Max
1.0
1.0
250
-
-
-
-
GHz
pF
dB
dB
Unit
μA
μA
=1V, I
C
=0mA
=5V, I
C
=10mA
=5V, I
E
=10mA
=5V, I
E
=0mA,f=1MHz
CE
CE
CB
CE
=5V, I
C
=10mA,f=1GHz
=5V, I
C
=5mA,f=1GHz
CE
ISAHAYA
ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
