〈Transistor〉
2SC5807
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5807 is a silicon NPN epitaxial Transistor.
It designed with high collector current and high collector dissipation.
OUTLINE DRAWING
4.6 MAX
1.6
Unit:�½��½�
1.5
FEATURE
●High collector current I
C
=5A
●Small collector to Emitter saturation voltage
●High collector dissipation P
C
=500mW
0.8 MIN
V
CE(sat)
=0.25V TYP. (@I
C
=4A,I
B
=100mA)
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
APPLICATION
For storobe ,DC/DC convertor,power amplify apprication
1.5
3.0
MARKING
TERMINAL CONNECTER
E: EMITTER
C: COLLECTOR
B: BASE
EIAJ : SC-62
JEDEC :
Note)
The dimension without tolerance represent central value.
MARKING
TYPE NAME
A K
Q
LOT No.
�½�
FE
ITEM
MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
C
CM
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collecter current *1
Collector dissipation (Total、Ta=25℃)
Collector dissipation (Total、Ta=25℃) *2
Junction temperature
Storage temperature
RATINGS
50
6
15
5
10
0.5
2
+150
-55∼+150
UNIT
V
V
V
A
P
C
T
j
T
stg
W
℃
℃
*1 Single Pulse Pw=10msec
*2 Pakkage mounted on 35mm×50mm×0.8mm ceramic board.
ISAHAYA ELECTRONICS CORPORATION