〈SMALL-SIGNAL TRANSISTOR〉
2SC5814
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5814 is a super mini package silicon NPN epitaxial
type transistor.
It is designed for low frequency voltage application.
OUTLINE DRAWING
Unit：½½
FEATURE
● Low collector to emitter saturation voltage.
VCE(sat)=0.3V max(@I
C
=30mA, I
B
=1.5mA)
● Facilitates miniaturization and high-density mouting.
● Excellent linearity of DC forward current gain.
APPLICATION
For hybrid IC, small type machine low frequency voltage
amplify application.
JEITA：SC-59
JEDEC:similar to TO-236
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
O
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
60
6
60
125
150
＋125
-55½＋125
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
½
ＦＥ
ITEM
MARKING
P
c
T
j
T
stg
Ｅ Ｒ
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
※ It shows ½
ＦＥ
classification in below table.
Item
½
ＦＥ
Marking
Q
120½270
EQ
R
180½390
ER
S
180½390
ES
Item
½
ＦＥ
Marking
E
150½300
EE
F
250½500
EF
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
I
C
=1uA ,R
V
V
V
V
CB
EB
BE
Test conditions
=∞
Limits
Min
60
-
-
※
120
70
-
-
-
Typ
-
-
-
-
-
-
200
1.5
Max
-
0.5
0.5
560
-
0.3
-
-
Unit
V
μA
μA
-
-
V
MHz
pF
=60V, I
E
=0mA
=4V, I
C
=0mA
=6V, I
C
=1mA
=6V, I
C
=0.1mA
=6V, I
E
=-10mA
=6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=30mA ,I
B
=1.5mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
