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2SC5938A 参数 Datasheet PDF下载

2SC5938A图片预览
型号: 2SC5938A
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY应用硅NPN外延型 [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE]
分类和应用:
文件页数/大小: 4 页 / 89 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
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SMALL-SIGNAL TRANSISTOR〉
2SC5938
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
DESCRIPTION
ISAHAYA 2SC5938 is a super mini package resin sealed
silicon NPN epitaxial transistor for muting and switching.
application
Unit: : mm
2.5
0.5
1.5
0.5
1
FEATURE
High Emitter to Base voltage
High Reverse hFE
Low ON RESISTANCE. R
ON
=1Ω
Small packege for mounting
VEBO=50V
2
3
APPLICATION
For muting, switching application
TERMINAL CONNECTOR
1
2
MAXIMUM RATINGS (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
3
: BASE
: EMITTER
: COLLECTOR
EIJA:SC-59
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
50
12
50
200
150
+125
-55 ∼ +125
Unit
V
V
V
mA
mW
TYPE NAME
hFE ITEM
MARKING
5
A
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
I
I
CBO
EBO
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Test conditions
Min
Limits
Typ
Max
Unit
0.1
0.1
μA
μA
mV
MHz
pF
A
B
350 to 1200
5B
V
CB
=50V, I
E
=0mA
V
EB
=50V, I
C
=0mA
V
CE
=2V, I
C
=4mA
h
FE
V
CE(sat)
f
T
C
ob
200
30
30
5.0
Item
h
FE
Marking
1200
I
C
=30mA, I
B
=3mA
V
CE
=6V, I
C
=4mA
V
CB
=10V, I
E
=0mA, f=1MHz
200 to 700
5A