2SC6046
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC6046 is a silicon NPN epitaxial type transistor designed with
high collector current, low V
CE（sat）.
OUTLINE DRAWING
2.5
0.5
1.5
0.5
Unit：mm
①
2.90
1.90
0.95
FEATURE
●High collector current
I
C（MAX）
=600mA
●Low collector to emitter saturation voltage
V
CE（sat）
<0.3V
max
(IC=150mA、IB=15mA）
0.95
③
②
0∼0.1
1.1
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGS（Ta.=25℃）
記 号
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
項
目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定 格 値
40
75
6
600
200
+150
-55∼+150
単 �½�
V
V
V
mA
mW
℃
℃
TERMINAL CONNECTOR
①：BASE
EIAJ：SC-59
②：EMITTER
JEDEC：TO-236
③：COLLECTOR
Resemblance
MARKING
TypeName
0.8
B
・
W
Limits
Typ
ELECTRICAL CHARACTERISTICS（Ta.=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
V
CE（sat）
V
BE（sat）
f
T
C
ob
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
IC=1mA、IB=0
IC=10uA、IE=0
IE=10uA、IC=0
VCB=60V、IE=0
VEB=3V、IC=0
IC=150mA、VCE=10V
IC=150mA、IB=15mA
IC=150mA、IB=15mA
IE=-20mA、VCE=20V、f=100MHz
VCB=10V、f=1MHz
Min
40
75
6
Max
Unit
V
V
V
nA
nA
---
V
V
MHz
pF
100
0.6
250
100
100
300
0.3
1.2
8
ISAHAYA ELECTRONICS CORPORATION
0.16
0.4
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
