〈SMALL-SIGNAL TRANSISTOR〉
2SC6053
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC6053 is a mini package resin sealed silicon NPN epitaxial
type transistor designed with high collector current, small V
CE(sat)
.
.
0.5
2.5
1.5
0.5
OUTLINE DRAWING
Unit：�½��½�
0.95
0.95
●Super mini package for easy mounting
●High collector current
I
C
= 650mA
2.9
1.90
FEATURE
①
②
③
●Low collector to emitter saturation voltage
VCE
(sat)
= 0.5V max
1.1
0.16
APPLICATION
Small type motor drive, relay drive, power supply
0∼0.1
TERMINAL CONNECTER
①：BASE
②：EMITTER
EIAJ ： SC-59
JEDEC ： TO-236 resemblance
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
③：COLLECTOR
Ratings
25
20
4
650
150
＋150
-55∼＋150
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
MARKING
P
c
T
j
T
stg
0.8
・B F
�½�
ＦＥ
ITEM
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
＊： It shows h
FE
classification in right table.
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
*
V
CE（sat）
fT
IC=100μA、RBE=∞
IC=10μA、IE=0
IE=10μA、IC=0
VCB=25V、IE=0
VEB=2V、IC=0
VCE=4V、IC=100mA
IC=500mA、IB=25mA
VCE=6V、IE=-10mA
Item
hFE
E
20
25
4
1
1
150
0.3
290
F
250 to 500
0.4
V
V
V
μA
μA
---
V
MHz
G
400 to 800
800
0.5
150 to 300
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
