PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA6001AC1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INA6001AC1 is a silicon PNP epitaxial type transistor.
It is designed with high collector current and small V
CE(sat)
.
2.8
1.5
0.65
UNIT：mm
0.95
0.95
・High collector current(I
C
=-1A)
・Low collector saturation voltage
(V
CE（sat）
<-0.5V
max
；I
C
=-500mA、I
B
=-50mA)
2.8
1.90
・Super mini package for easy mounting
①
②
③
1.1
For switching, Small type motor drive
0½0.1
0.8
APPLICATION
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-100
-120
-6
-1
200
＋150
-55½＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
½
ＦＥ1
½
ＦＥ2
V
CE(sat)
V
BE(sat)
f
T
Cob
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=-10mA，I
B
=0mA
I
C
=-100μA，I
E
=0mA
I
E
=-100μA，I
C
=0mA
V
CB
=-120V，I
E
=0mA
V
EB
=-6V，I
C
=0mA
V
CE
=-2V，I
C
=-150mA
V
CE
=-5V，I
C
=-1A
I
C
=-500mA，I
B
=-50mA
I
C
=-500mA，I
B
=-50mA
V
CE
=-5V，I
E
=50mA，f=100MHz
V
CB
=-10V，f=1MHz
LIMITS
MIN
TYP
MAX
-100
-
-
-120
-
-
-6
-
-
-
-
-0.5
-
-
-0.5
140
-
330
40
-
-
-
-
-0.5
-
-
-1.1
100
-
-
-
-
10
UNIT
V
V
V
μA
μA
-
-
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.13
AGG
0.4
FEATURE
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
