PRELIMINARY
Notice : This is not a final specification.
Some parametric subject to change.
<SMALL-SIGNAL TRANSISTOR>
INA6002AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCLIPTION
INA6002AC1 is a silicon PNP epitaxial type transistor.
It is designed with high voltage.
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit：mm
FEATURE
2.8
・Super mini package for easy mounting.
・Hige voltage V
CEO
=-300V
1.9
0.95
(1)
(3)
0.95
(2)
APPLICATION
0.8
DC/DC convertor, High voltage switching
0.13
0∼0.1
1.1
TERMINAL CONNECTER
(1) BASE
(2) EMITTER
(3) COLLECTOR
JEITA：SC-59
JEDEC：Similar toTO-236
MAXIMUM RATINGS （Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
-300
-7
-300
-50
150
150
-55∼+150
Unit
V
V
V
mA
mW
℃
℃
MARKING
3W
ELECTRIC CHARACTERISTICS （Ta=25℃）
Symbol
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Collector-Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Test conditions
I
C
=-50µA，I
E
=0
I
E
=-50µA，I
C
=0
I
C
=-1mA，R
BE
=∞
V
CB
=-300V，I
E
=0
V
EB
=-5V，I
C
=0
V
CE
=-10V，I
C
=-1mA
I
C
=-10mA，I
B
=-1mA
V
CE
=-6V，I
E
=10mA
V
CB
=-6V，I
E
=0，f=1MHz
Limits
Min
-300
-7
-300
-
-
50
-
-
-
Typ
-
-
-
-
-
-
-
50
2.6
Max
-
-
-
-0.5
-0.5
305
-1.0
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.4
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
