PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INA6005AC1 is a silicon PNP transistor.
It is designed with high voltage.
2.8
1.5
0.65
UNIT：mm
2.8
1.90
0.95 0.95
・Super
mini package for easy mounting
・High
voltage V
CEO
=-400V
①
②
③
APPLICATION
DC/DC convertor, High voltage switching
1.1
0.8
0.13
0½0.1
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-400
-7
-400
-100
200
＋150
-55½＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
ALA
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I
C
=-50μA，I
E
=0mA
I
E
=-50μA，I
C
=0mA
I
C
=-1mA，R
BE
=∞
V
CB
=-400V，I
E
=0mA
V
EB
=-6V，I
C
=0mA
V
CE
=-10V，I
C
=-10mA
I
C
=-20mA，I
B
=-2mA
V
CE
=-20V，I
E
=10mA，f=100MHz
V
CB
=-10V，I
E
=0mA，f=1MHz
LIMITS
MIN
TYP
MAX
-400
-
-
-7
-
-
-400
-
-
-
-
-1
-
-
-1
82
-
200
-
-
-0.6
-
65
-
-
5.5
-
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0.4
FEATURE
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
