<SMALL-SIGNAL TRANSISTOR>
INA6005AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6005AP1 is a silicon PNP transistor.
It is designed with high voltage.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：½½
1.5
FEATURE
・Small package for easy mounting.
0.8 MIN
・High voltage V
CEO
= -400V
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
1.5
APPLICATION
DC-DC converter, High voltage switching.
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
E：EMITTER
Ｅ: エミッタ
Ｃ: コレクタ
C：COLLECTOR
Ｂ: ベース
B：BASE
JEDEC：―
JEITA:SC-62
EIAJ : SC-62
JEDEC:SOT-89
JEDEC :
MAXIMUM RATING
（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-400
-7
-400
-100
500
＋150
-55½＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
B C
W
LOT №
h
FE
ITEM
LIMITS
MIN
-400
-7
-400
-
-
82
-
-
-
TYP
-
-
-
-
-
-
-
65
5.5
MAX
-
-
-
-1
-1
280
-0.6
-
-
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½
ＦＥ
V
CE(sat)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
（Ta=25℃）
TEST CONDITIONS
I
C
=-50μA，I
E
=0mA
I
E
=-50μA，I
C
=0mA
I
C
=-1mA，R
BE
=∞
V
CB
=-400V，I
E
=0mA
V
EB
=-6V，I
C
=0mA
V
CE
=-10V，I
C
=-10mA
I
C
=-20mA，I
B
=-2mA
V
CE
=-20V，I
E
=10mA
V
CB
=-10V，I
E
=0mA，f=1MHz
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
