PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INC1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INC1001AC1 is a silicon NPN epitaxial type transistor.
It is designed with high collector current and small V
CE(sat)
.
2.8
1.5
0.65
UNIT：mm
0.95
0.95
・High collector current(I
C
=500mA)
・Low collector saturation voltage
(V
CE（sat）
<0.25V
max
；IC=100mA、IB=10mA)
2.8
1.90
・Super mini package for easy mounting
①
②
③
1.1
For switching, Small type motor drive
0½0.1
0.8
APPLICATION
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
80
80
7
0.5
200
500（*）
＋150
-55½＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
*Mounted on glass epoxy board(46mm×19mm×1mm)
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
½ＦＥ1
½ＦＥ2
VCE(sat)
fT
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
TEST CONDITIONS
I
C
=1mA，I
B
=0mA
I
C
=100μA，I
E
=0mA
I
E
=100μA，I
C
=0mA
V
CB
=80V，I
E
=0mA
V
EB
=7V，I
C
=0mA
VCE=1V，I
C
=10mA
VCE=1V，I
C
=100mA
I
C
=100mA，I
B
=10mA
VCE=2V，I
E
=-10mA，f=100MHz
MIN
80
80
7
-
-
105
95
-
100
LIMITS
TYP
MAX
-
-
-
-
-
-
-
0.15
-
0.15
-
-
-
-
-
0.3
-
-
UNIT
V
V
V
μA
μA
-
-
V
MHz
ISAHAYA ELECTRONICS CORPORATION
0.13
CFD
0.4
FEATURE
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
