INC5001AP1
For low frequency power amplify
Silicon NPN Epitaxial
DESCRIPTION
INC5001AP1 is a silicon NPN epitaxial transistor designed for relay
drive or Power supply application.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：�½��½�
1.5
FEATURE
●Small package for easy mounting.
●High voltage V
CEO
=60V
●Low VCE(sat) VCE（sat）=0.25V max（@I
C
=500mA/ I
B
=50mA）
●High collector dissipation P
C
=500mW
0.8 MIN
●High collector current I
C
=1A
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
1.5
APPLICATION
Relay drive, power supply for audio equipment, VTR, etc
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
Ｅ:
E：EMITTER
エミッタ
Ｃ:
C：COLLECTOR
コレクタ
Ｂ: ベース
B：BASE
EIAJ : SC-62
JEDEC :
JEDEC：―
MAXIMUM RATING
（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
C
CM
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
（Ta=25℃）
RATING
80
5
60
1
2
500
＋150
-55�½�＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
A Y
W
LOT №
h
FE
ITEM
LIMITS
MIN
80
5
60
0.1
0.1
130
320
0.25
150
10
TYP
MAX
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
�½�
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
TEST CONDITIONS
I
C
=10μA，I
E
=0mA
I
E
=10μA，I
C
=0mA
I
C
=1mA，R
BE
=∞
V
CB
=80V，I
E
=0mA
V
EB
=5V，I
C
=0mA
V
CE
=4V，I
C
=0.1A
I
C
=500mA，I
B
=50mA
V
CE
=10V，I
E
=-50mA
V
CB
=10V，I
E
=0mA，f=1MHz
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
