ＩＮJ0001AＸ SERIES
High speed switching
Silicon P-channel MOSFET
MAXIMUM RATING（Ｔ�½�＝２５℃）
SYMBOL
Ｖ
DSS
Ｖ
GSS
Ｉ
D
Ｐ
Ｄ
Ｔch
Ｔ�½��½��½�
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total
power
dissipation
（Ta=25℃）
Channel temperature
Range of Storage temperature
INJ0001AT2
RATING
INJ0001AU1
INJ0001AM1
-50
±8
-100
150
+150
-55�½�+150
200
INJ0001AC1
UNIT
V
V
mA
mW
℃
℃
125（※）
+125
-55�½�+125
ELECTRICAL CHARACTERISTICS（Ｔ�½�＝２５℃）
SYMBOL
PARAMETER
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
Output capacitance
Switching time
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
D
=-100μA, V
V
V
V
GS
DS
GS
V
(BR)DSS
I
GSS
I
DSS
V
th
|
Y
fs
|
R
DS(ON)
C
iss
C
oss
t
ON
t
OFF
=0V
MIN
-50
-
-
-0.6
-
-
-
-
-
-
LIMIT
TYP
-
-
-
-
220
7
28
5.2
13
135
MAX
-
±0.5
-1.0
-1.2
-
-
-
-
-
-
UNIT
V
μA
μA
V
mS
Ω
pF
pF
ns
=±5V, V
DS
=0V
=V
=-50V ,V
GS
=0V
DS
GS
I
D
=-250μA, V
DS
=-10V, I
D
=-0.1A
GS
I
D
=-100mA, V
V
V
V
V
DS
DS
=-4.0V
=-10V, V
=-10V, V
GS
GS
=0V,f=1MHz
=0V,f=1MHz
=-5V , I
D
=-10mA
GS
=0�½�-5V
DD
Switching time test condition
test circuit
0
IN
OUT
0V
R
L
-5V
10μs
V
DD
=-5V
D.U.≦1%
Common source
Ta=25℃
50Ω
V
DD
input
waveform
-5V
V
DS(ON）
10%
90%
output
waveform
V
DD
ton
90%
10%
tr
toff
tf
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
