TYPICAL CHARACTERISTICS
Ta=25℃
100
1.6V
80
Drain current ID (mA)
1.4V
60
1.3V
1.2V
20
1.1V
VGS=1.0V
0
5
Drain-Source voltage VDS (V)
10
Drain current ID (mA)
1.5V
0.8
ID -VDS
1
1.0V
0.95V
Ta=25℃
ID -VDS(Low voltage region)
0.6
40
0.4
0.9V
0.2
0.85V
VGS=0.8V
0
0
0
0.1
0.2
0.3
0.4
0.5
Drain-Source voltage VDS (V)
IDR -VDS
100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
1000
Ta=25℃
VDS=10V
ID -VGS
100
10
10
1
-0
-0.5
-1
-1.5
Drain-Source voltage VDS (V)
|Yfs| - ID
1000
Ta=25℃
VDS=10V
Forward transfer admittance
|Yfs| (mS)
Drain-Source ON voltage
VDS(ON) (mV)
-2
1
0
1
2
3
Gate-Source voltage VGS (V)
VDS(ON) - ID
1000
Ta=25℃
VGS=4V
4
5
100
100
10
10
1
1
10
100
Drain current ID (mA)
t - ID
10000
Ta=25℃
toff
1000
Switching time t (ns)
100
1000
1
1
10
Drain current ID (mA)
C - VDS
100
Ciss
Capacitance C (pF)
tf
100
10
Coss
10
ton
tr
Ta=25℃
VGS=0V
1
1
0.1
1
10
Drain current ID (mA)
100
0.1
1
10
Drain-Source voltage VDS (V)
100
ISAHAYA ELECTRONICS CORPORATION