TYPICAL CHARACTERISTICS
Ta=25℃
100
2.8V
2.7V
2.6V
2.5V
2.4V
ID -VDS
1
Ta=25℃
1.8V
ID -VDS(Low voltage region)
1.75V
1.7V
80
Drain Current ID (mA)
0.8
Drain current ID (mA)
2.3V
60
VGS=2.2V
0.6
1.65V
40
2.1V
2.0V
1.9V
0.4
1.6V
20
0.2
1.55V
VGS=1.5V
0
0
5
Drain-Source voltage VDS (V)
1.7V
0
10
0
0.1
0.2
0.3
0.4
Drain-Source voltage VDS (V)
1.4V
0.5
IDR -VDS
100
Drain Reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
1000
Ta=25℃
VDS=10V
ID -VGS
100
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Drain-Source on-state resistance
RDS(on) (Ω)
Ta=25℃
VDS=10V
Forward transfer admittance
|Yfs| (mS)
10
Ta=25℃
8
6
RDS(on) - ID
100
VGS=4V
4
10V
10
2
0
1
1
10
100
1000
Drain current ID (mA)
0
50
100
Drain current ID (mA)
150
200
t - ID
10000
Ta=25℃
toff
C - VDS
100
Switching time t (ns)
1000
Ciss
Capacitance C (pF)
tf
10
Coss
100
ton
tr
1
10
Ta=25℃
VGS=0V
1
0.1
1
10
Drain current ID (mA)
100
0.1
0.1
1
10
Drain-Source voltage VDS (V)
100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
