〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1235AC1 ISA1602AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
ISA1235AC1
2.8
1.5
OUTLINE DRAWING
ISA1602AM1
2.1
0.425 1.25 0.425
UNIT：mm
0.65
0.65
0.4
2.8
1.9
0.95 0.95
2.0
1.3
0.65 0.65
FEATURE
・Excellent linearity of DC forward current gain.
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
①
②
③
①
②
③
0.13
APPLICATION
For small type machine low frequency voltage
amplify application.
0.8
0½0.1
JEITA：SC-59
JEDEC：TO-236 resemblance
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0.7
0½0.1
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS（Ta=25℃）
Symbol
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1235AC1 ISA1602AM1
-60
-6
-50
-200
200
+150
-55½+150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
.
MF
hFE ITEM
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
Ｉ
EＢＯ
½
ＦＥ
*
½
ＦＥ
Ｖ
ＣＥ（½½½）
½
Ｔ
Cob
NF
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise Figure
Test conditions
I
C
=-100μA，R
BE
=∞
V
CB
=-60V，I
E
=0
V
EB
=-6V，I
C
=0
V
CE
=-6V，I
C
=-1mA
V
CE
=-6V，I
C
=-0.1mA
I
C
=-100mA，I
B
=-10mA
V
CE
=-6V，I
E
=10mA
V
CB
=-6V，I
E
=0,f=1MHz
V
CE
=-6V，I
E
=0.3mA，
f=100Hz，RG=10kΩ
Min
-50
－
－
150
90
－
－
－
－
Limits
Ave
－
－
－
－
－
－
200
4.0
－
Max
－
-0.1
-0.1
500
－
-0.3
－
－
20
UNIT
V
μA
μA
－
－
V
MHz
pF
dB
*：It shows hFE classification in below table.
½FE
E
150½300
F
250½500
ISAHAYA ELECTRONICS CORPORATION
0.15
1.1
0.9
0.3
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
