〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial
transistor,It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
1.21±0.1
0.79±0.1
0.25±0.02
③
JEITA：─
①：BASE
②：EMITTER
③：COLLECTOR
J
I
H
F
G
OUTLINE DRAWING
Unit：�½��½�
1.21±0.1
0.4
0.8
0.4
FEATURE
● Super-thin flat lead type package. t=0. 5mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
①
②
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application
0.5±0.03
MAXIMUM RATINGS(Ta=25℃)
Symbol
VCBO
VEBO
V
CEO
IC
PC
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-6
-50
-150
125
（※）
125
-55�½�125
Unit
V
V
V
mA
mW
℃
℃
A
ISAHAYA：T-USM
TERMINAL CONNECTER
MARKING
Abbreviation for Kind
hFE Item
７
B
C
D
Ｆ
E
※package mounted on 9×19×1mm glass-epoxy substrate.
A�½�F running No.
G�½�J
Month of manufacture
電気的特性
（Ta=25℃）
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E
saturation voltage
Symbol
V(BR)
CEO
I
CBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
I
C
=-100μA, R
V
V
V
V
CB
EB
Test conditions
Min
BE
Limits
Min
-
-
-
-
-
-
200
3.0
Min
-
-0.1
-0.1
500
-
-0.3
-
-
0.11±0.02
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
Unit
V
μA
μA
-
-
V
MHz
pF
=∞
-50
-
-
150
90
-
-
-
=-60V, I
E
=0mA
=-6V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-100μA
CE
CE
I
C
=-100mA, I
B
=-10mA
V
V
CE
Gain bandwidth product
Collector output capacitance
=-6V, I
E
=10mA
=-6V, I
E
=0A, f=1MHz
CB
※ It shows hFE classification in below table
Item
hFE
E
150�½�300
F
250�½�500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
