PRELIMINARY
※This
datasheet is possibility of change.
Because this device is developing now.
ISC6046AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC6046AU1 is a silicon NPN epitaxial type transistor designed with
high collector current, low V
CE（sat）.
OUTLINE DRAWING
1.5
0.35
0.8
0.35
Unit：mm
0.5
0.22
①
③
FEATURE
●High collector current
I
C（MAX）
=600mA
●Low collector to emitter saturation voltage
V
CE（sat）
<0.3V
max
(IC=150mA、IB=15mA）
1.7
1.0
0.5
②
0.7
0.55
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
JEITA：SC-75A
②：EMITTER
JEDEC：－
③：COLLECTOR
MAXIMUM RATINGS（Ta.=25℃）
記 号
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
T
stg
項
目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定 格 値
40
75
6
600
150
+150
-55½+150
単 ½
V
V
V
mA
mW
℃
℃
MARKING
TypeName
B
・
W
ELECTRICAL CHARACTERISTICS（Ta.=25℃）
Symbol
V
（BR）CEO
V
（BR）CBO
V
（BR）EBO
I
CBO
I
EBO
h
FE
V
CE（sat）
V
BE（sat）
f
T
C
ob
Parameter
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
I
C
=1mA、I
B
=0
I
C
=10uA、I
E
=0
I
E
=10uA、I
C
=0
V
CB
=60V、I
E
=0
V
EB
=3V、I
C
=0
I
C
=150mA、V
CE
=10V
I
C
=150mA、I
B
=15mA
I
C
=150mA、I
B
=15mA
I
E
=-20mA、V
CE
=20V、f=100MHz
V
CB
=10V、f=1MHz
Min
40
75
6
－
－
100
－
0.6
－
－
Limits
Typ
－
－
－
－
－
－
－
－
250
－
Max
－
－
－
100
100
300
0.3
1.2
－
8
Unit
V
V
V
nA
nA
－
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
0½0.1
0.12
0.32
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
