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RT1A3906-T122 参数 Datasheet PDF下载

RT1A3906-T122图片预览
型号: RT1A3906-T122
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY申请PNP硅外延型(迷你型) [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)]
分类和应用:
文件页数/大小: 3 页 / 79 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号RT1A3906-T122的Datasheet PDF文件第2页浏览型号RT1A3906-T122的Datasheet PDF文件第3页  
〈SMALL-SIGNAL TRANSISTOR〉
RT1A3906-T122
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
DESCRIPTION
RT1A3906
is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
0.5
OUTLINEDRAWING
unit:�½��½�
2.5
1.5
0.5
FEATURE
2.9
1.90
●Excellent
linearity of DC forward gain.
●Super
mini package for easy mounting
● Small collector to emitter saturation voltage.
VCE(sat)=-0.4Vmax(@I
C
=-50mA、I
B
=-5mA)
0.95
1
0.95
2
3
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
Terminal connection
①:Base
②:Emitter
③:Collector
0.8
0∼0.1
JEITA:SC-59
JEDEC : TO-236resemble
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-60
-40
-6
200
150
+150
-55∼+150
Unit
V
V
V
mA
mW
Marking Figure
P
c
T
j
T
stg
Abbreviation
for Kind
hFE Item
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
�½�
FE
V
CE (sat)
V
BE (sat)
�½�
T
C
ob
C
C
E
t o
t o
t o
E
B
B
Parameter
b r e a k
b r e a k
b r e a k
c u t
d o w n
d o w n
d o w n
o f f
c u t
o f f
v o l t a g e
v o l t a g e
v o l t a g e
Test conditions
Ic=-1mA,R
BE
=∞
Ic=-10μA,I
E
=0
I
E
=-10μA,I
C
=0
V
CE
=-30V,V
EB
=-3V
V
CE
=-30V,V
EB
=-3V
V
CE
=-1V,I
C
=-10mA
Ic=-50mA,I
B
=-5mA
Ic=-50mA,I
B
=-5mA
V
CE
=-20V, I
C
=-10mA
,f=100MHz
V
CB
=-5V,I
E
=0,f=1MHz
Limits
Min
-40
-60
-6
-50
-50
100
250
300
-400
-950
5.0
Min
Min
0.16
1.1
0.4
Unit
V
V
V
nA
nA
B a s e
c u r r e n t
c u r r e n t
g a i n
C o l l e c t o r
D C
C
B
t o
t o
f o r w a r d
E
E
c u r r e n t
S a t u r a t i o n
S a t u r a t i o n
V o l t a g e
V o l t a g e
p r o d u c t
mV
mV
MHz
pF
G a i n
b a n d w i d t h
o u t p u t
C o l l e c t o r
c a p a c i t a n c e
ISAHAYA ELECTRONICS CORPORATION