PRELIMINARY
Notice:this is not a final specification.
Some parametric limits are subject to
change.
RT1C3904-T12
Transistor
For
General purpose
Application
Silicon NPN Epitaxial Type
RT1C3904 is a one chip transistor.
OUTLINE DRAWING
UNIT:mm
FEATURE
・Mini
package for easy mounting.
0.5
2.5
1.5
0.5
APPLICATION
General purpose transistor
1
2
3
MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
V
CEO
Collector to Emitter voltage
V
CBO
V
EBO
I
C
Collector to Base voltage
Emitter to Base voltage
Collector current
RATINGS
40
60
6.0
200
UNIT
V
V
V
mA
Terminal Connector
1
2
3
: Base
: Emitter
: Collector
EIAJ : SC-59
JEDEC : TO-236 resemblance
THERMAL CHARACTERISTICS
SYMBOL
P
D
R
θJA
P
D
R
θJA
T
j
T
stg
Characteristics
Total Device Dissipation Glass-Epoxi
Board(1) Ta=25℃
Derate Adove 25℃
RATINGS
225
1.8
556
300
2.4
417
+150
-55 to +150
UNIT
mW
mW/℃
℃/mW
mW
mW/℃
℃/mW
℃
℃
Equivalent Circuit
COLLECTOR
BASE
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate(2)Ta=25℃
Derate Adove 25℃
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted)
LIMITS
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
PARAMETER
C to E break down voltage
(3)
C to B break down voltage
E to B break down voltage
Base cut off current
Collector cut off current
TESTCONDITIONS
I
C
=1.0mA, I
B
=0
I
C
=10μA, I
E
=0
I
C
=10μA, I
C
=0
V
CE
=30V, V
EB
=3.0V
V
CE
=30V, V
EB
=3.0V
MIN
40
60
6
50
50
TYP
MAX
UNIT
V
V
V
nA
nA
1.Glass-Epoxi=1.0×0.75×3.2in
2.Alumina=0.4×0.3×3.2 in
3.Pulse test
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
