ＲＴ１Ｎ１４１Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N141T
RT1N141U
RATING
RT1N141M
50
10
50
100
200
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N141C
RT1N141S
UNIT
V
V
V
mA
mA
125（※）
+125
-55�½�+125
150
200
+150
-55�½�+150
450
mW
℃
℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=10mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
MIN
50
50
0.1
1.5
1.1
10
1.0
200
0.3
3.0
13
1.1
LIMIT
TYP
MAX
0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
0.8
7.0
0.9
V
CE
=6V，I
E
=-10mA
TYPICAL CHARACTERISTICS
Input On Voltage - Collector Current
10
Input On Voltage ＶＩ（ＯＮ）
VCE=0.2V
DC Forward Current Gain - Collector Current
1000
DC Forward Current Gain �½�ＦＥ
VCE=5V
1
100
0.1
1
10
Collector Current ＩＣ（�½�Ａ）
Collector Current - Input Off Voltage
1000
VCE=5V
100
10
1
10
Collector Current ＩＣ（�½�Ａ）
100
Collector Current ＩＣ （�½�Ａ）
100
10
0.0
0.4
0.8
1.2
1.6
2.0
Input Off Voltage ＶＩ（ＯＦＦ）（Ｖ）
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
