Ｒ １ １ １ SERIES
ＴＮ５Ｘ
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N151U
RATING
RT1N151M
RT1N151C
50
10
50
100
200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N151S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｖ
（ Ｎ
ＩＯ ）
Ｖ
（ Ｆ ）
ＩＯ Ｆ
Ｒ
１
Ｒ ／Ｒ
１
２
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=5mA
I
C
=5mA，I
B
=0.25mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
MIN
50
82
0.1
2.4
1.1
100
1.0
200
0.3
8.8
MAX
0.1
UNIT
V
μA
−
V
V
V
kΩ
MHz
0.8
0.8
1.2
V
CE
=6V，I
E
=-10mA
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
D C F O R W A R D C U R R E N T G A IN
VS.COLLECTOR CURRENT
10
DC FORWARD CURRENT GAIN
Ｆ
�½�
Ｅ
INPUT ON VOLTEGE
I(ON)
（ ）
Ｖ
Ｖ
1000
V
CE
=0.2V
V
CE
=5V
1
100
0.1
1
10
100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
1
10
100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
1000
COLLECTOR CURRENT
Ｃ
μＡ
Ｉ（ ）
V
CE
=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE
ＩＯＦ ）
Ｖ
Ｖ
（ Ｆ
（ ）
2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
