ＲＴ１Ｎ２４０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
RT1N240U
RT1N240M
RT1N240C
50
6
50
100
200
150 200
+150
+150
-55∼+150
-55∼+150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N240S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=100 μ
A，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=1mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
100
15
MAX
0.1
0.3
29
UNIT
V
μ
A
−
V
kΩ
MHz
=-10mA
22
200
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T GA IN
V S. C OL L EC TOR C U R R EN T
10
DC FORWARD CURRENT GAIN �½�
ＦＥ
INPUT ON VOLTEGE Ｖ
I(ON)
（Ｖ）
1000
V
CE
=0.2V
V
CE
=5V
1
100
0.1
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（�½�Ａ）
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
100
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（�½�Ａ）
100
1000
COLLECTOR CURRENT Ｉ
Ｃ
（μＡ）
V
CE
=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE Ｖ
Ｉ（ＯＦＦ）
（Ｖ）
2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
