ＲＴ１Ｎ４３１Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N431T
RT1N431U
RATING
RT1N431M
50
10
50
100
200
150
RT1N431C
RT1N431S
UNIT
V
V
V
mA
mA
mW
℃
℃
125
（※ ）
+125
-55�½�+125
125
450
+150
-55�½�+150
LIMIT
TYP
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=10mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
MIN
50
20
MAX
0.1
UNIT
V
μA
－
V
V
V
kΩ
MHz
0.8
3.3
0.8
V
CE
=6V，I
E
=-10mA
0.1
1.4
1.1
4.7
1.0
200
0.3
2.3
6.1
1.2
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA G E
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T GA IN
V S. C OL L EC TOR C U R R EN T
100
DC FORWARD CURRENT GAIN h
FE
1000
V
CE
=0.2V
V
CE
=5V
INPUT ON VOLTEGE V
I(ON)
(V)
10
100
1
1
10
COLLECTOR CURRENT I
C
(mA)
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
100
1
10
COLLECTOR CURRENT I
C
(mA)
100
1000
COLLECTOR CURRENT Ｉ
Ｃ
（μＡ）
V
CE
=5V
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE V
I(OFF)
(V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
