Ｒ １ ４ ４ SERIES
ＴＮ３Ｘ
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N434U
RATING
RT1N434M
RT1N434C
50
6
50
100
200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N434S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｖ
（ Ｎ
ＩＯ ）
Ｖ
（ Ｆ ）
ＩＯ Ｆ
Ｒ
１
Ｒ ／Ｒ
１
２
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=5mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
MIN
50
50
0.1
0.9
0.7
4.7
4.7
200
0.3
1.7
6.1
5.1
MAX
0.1
UNIT
V
μA
−
V
V
V
kΩ
MHz
0.5
3.3
4.2
V
CE
=6V，I
E
=-10mA
TYPICAL CHARACTERISTICS
Input on voltage - Collector current
Input on voltage ＶＩ（ＯＮ）（Ｖ）
DC forward current gain �½�ＦＥ
10
1000
DC forward current gain - Collector current
100
1
10
1
0.1
1
10
Collector current Ｃ �½�Ａ
Ｉ（ ）
Collector current - Input off voltage
100
0.1
1
10
Collector current Ｃ �½�Ａ
Ｉ（ ）
100
Collector current ＩＣ （�½�Ａ）
1000
100
10
0.0
0.4
0.8
1.2
1.6
Input off voltage Ｉ Ｆ （ ）
Ｖ（
ＯＦ ） Ｖ
2.0
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
