Ｒ １ ３ Ｘ SERIES
Ｔ P２ ０
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P230U
RATING
RT1P230M
RT1P230C
-50
-6
-50
-100
-200
200
+150
-55∼+150
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P230S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｒ
１
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
=10mA
MIN
-50
100
1.5
2.2
150
-0.3
2.9
MAX
-0.1
UNIT
V
μA
−
V
kΩ
MHz
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
-10
INPUT ON VOLTEGE
I(ON)
（ ）
Ｖ
Ｖ
DC FORWARD CURRENT GAIN
Ｆ
�½�
Ｅ
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
1000
-1
100
-0.1
-0.1
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
-0.1
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
-1000
COLLECTOR CURRENT
Ｃ
μＡ
Ｉ（ ）
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
-2
INPUT OFF VOLTAGE
ＩＯＦ ）
Ｖ
Ｖ
（ Ｆ
（ ）
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
