Ｒ １ ２ １ SERIES
ＴＰ４Ｘ
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P241U
RATING
RT1P241M
RT1P241C
-50
-10
-50
-100
-200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P241S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｖ
（ Ｎ
ＩＯ ）
Ｖ
（ Ｆ ）
ＩＯ Ｆ
Ｒ
１
Ｒ ／Ｒ
１
２
�½�
Ｔ
�½�
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
Input on voltage - Collector Current
-10
Input on voltage ＩＯＮ （ ）
Ｖ（ ） Ｖ
DC forward current gain Ｆ
�½�Ｅ
1000
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-5mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
50
MAX
-0.1
UNIT
V
μA
−
V
V
V
kΩ
MHz
-0.8
16
0.9
V
CE
=-6V，I
E
=10mA
DC forward current gain -Collector Current
-0.1
-1.8
-1.1
22
1.0
150
-0.3
-3.0
28
1.1
100
-1
10
-0.1
-1
-10
Collector Current Ｃ �½�Ａ
Ｉ（ ）
Collector Current-Input off voltage
-100
1
-1
-10
Collector Current Ｃ �½�Ａ
Ｉ（ ）
-100
-1000
Collector Current Ｃ μＡ
Ｉ（ ）
-100
-10
-0
-0.4
-0.8
-1.2
-1.6
Input off voltage ＩＯＦ ） Ｖ
Ｖ（ Ｆ （ ）
-2
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
