Ｒ １ ４ Ｑ SERIES
ＴＰ４Ｘ
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＢＯ
Ｃ
Ｖ
ＢＯ
Ｅ
Ｖ
ＥＯ
Ｃ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ
�½�
Ｔ�½�
�½��½�
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P44QU
RATING
RT1P44QM
RT1P44QC
-50
-15
-50
-100
-200
200
+150
-55∼+150
〈
Transistor
〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
RT1P44QS
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
150
+150
-55∼+150
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
ＢＲ）ＣＥＯ
（
Ｉ
ＣＢＯ
�½�
Ｅ
Ｆ
Ｖ
Ｅ �½��½�
Ｃ （ �½�）
Ｖ
（ Ｎ
ＩＯ ）
Ｖ
（ Ｆ ）
ＩＯ Ｆ
Ｒ
１
Ｒ ／Ｒ
１
２
�½�
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-5mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
MIN
-50
33
-4.2
-3.1
47
0.21
150
-0.3
-8.9
61
0.26
MAX
-0.1
UNIT
V
μA
−
V
V
V
kΩ
MHz
-2.3
33
0.17
V
CE
=-6V，I
E
=10mA
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
D C F O R W A R D C U R R E N T G A IN
VS.COLLECTOR CURRENT
-10
DC FORWARD CURRENT GAIN
Ｆ
�½�
Ｅ
INPUT ON VOLTEGE
I(ON)
（ ）
Ｖ
Ｖ
1000
V
CE
=-0.2V
V
CE
=-5V
-1
100
-0.1
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
-1
-10
-100
COLLECTOR CURRENT
Ｃ
（ ）
Ｉ �½�Ａ
-1000
COLLECTOR CURRENT
Ｃ
μＡ
Ｉ（ ）
V
CE
=-5V
-100
-10
0
-0.8
-1.6
-2.4
-3.2
-4
INPUT OFF VOLTAGE
ＩＯＦ ）
Ｖ
Ｖ
（ Ｆ
（ ）
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
